smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK1151S features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator and dc-dc converter absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 450 v gate to source voltage v gss 30 v drain current (dc) i d 1.5 a drain current(pulse) * i d 6a power dissipation p d 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s, duty cycle 1% electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =10ma,v gs =0 450 v gate to source breakdown voltage v gss i d = 100 a,v ds =0 30 v drain cut-off current i dss v ds =360v,v gs =0 100 a gate leakage current i gss v gs = 25v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 2.0 3.0 v forward transfer admittance y fs v ds =20v,i d =1a 0.6 1.1 s drain to source on-state resistance r ds(on) v gs =10v,i d =1a 3.5 5.5 input capacitance c iss 160 pf output capacitance c oss 45 pf reverse transfer capacitance c rss 5pf turn-on delay time t d(on) 5ns rise time t r 10 ns turn-off delay time t d(off) 20 ns fall time t f 10 ns v ds =10v,v gs =0,f=1mhz i d =1a,v gs(on) =0,r l =30 smd type ic smd type transistors smd type smd type smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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